STN3NF06 CANAL N 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II MOSFET DE POTENCIA
fabricante:
Fabricante
Descripción:
Soporte SOT-223 de la superficie 3.3W (Tc) del canal N 60 V 4A (Tc)
Categoría:
chips CI electrónicos
Precio:
Negotiate
Forma de pago:
T/T, Western Union, Paypal
Especificaciones
Vds:
60V
Vgs:
± 20V
Ptot:
3.3W
dv/dt:
10 V/ns
EAS:
200mJ
Tstg:
-55 a 150°C
Punto culminante:
electronics ic chip
,integrated circuit ic
Introducción
STN3NF06
CANAL N 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II MOSFET DE POTENCIA
| TIPO | VDSS | RDS (activado) | IDENTIFICACIÓN |
| STN3NF06 | 60 V | < 0,1 Ω | 4A |
■ RDS TÍPICO (activado) = 0,07 Ω
■ CAPACIDAD dv/dt EXCEPCIONAL
■ 100 % PROBADO EN AVALANCHAS
■ TECNOLOGÍA RESISTENTE PARA AVALANCHAS
DESCRIPCIÓN
Este Power MOSFET es el último desarrollo de
STMicroelectronis único "Single Feature Size™"
proceso basado en tiras.El transistor resultante muestra
densidad de empaque extremadamente alta para baja resistencia,
características resistentes a la avalancha y menos crítico
pasos de alineación, por lo tanto, un fabricante notable
-durante la reproducibilidad.
APLICACIONES
■ CUBIERTAS CC-CC Y CC-CA
■ CONTROL DE MOTOR DE CC (CONTROLADORES DE DISCO, etc.)
■ RECTIFICACIÓN SINCRONIZADA
ÍNDICES ABSOLUTOS MÁXIMOS
| Símbolo | Parámetro | Valor | Unidad |
| VDS | Tensión drenaje-fuente (VGS = 0) | 60 | V |
| VDGR | Voltaje de puerta de drenaje (RGS = 20 kΩ) | 60 | V |
| VGS | Voltaje de fuente de puerta | ± 20 | V |
| IDENTIFICACIÓN | Corriente de drenaje (continua) a TC = 25°C | 4 | A |
| IDENTIFICACIÓN | Corriente de drenaje (continua) a TC = 100 °C | 2.9 | A |
| IDM(•) | Corriente de drenaje (pulsada) | dieciséis | A |
| Disipación total a TC = 25°C | 3.3 | W | |
| ptot | Factor de reducción | 0.026 | W/°C |
| dv/dt (1) | Pendiente de voltaje pico de recuperación de diodo | 10 | V/ns |
| SEA (2) | Energía de avalancha de un solo pulso | 200 | mJ |
| Tstg | Temperatura de almacenamiento | -55 a 150 | ºC |
| tj | Temperatura de unión operativa |
(•) Ancho de pulso limitado por el área de operación segura.
(1) ISD ≤4A, di/dt ≤150A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Tj inicial = 25 oC, ID = 4A, VDD = 30V
¡Oferta de venta caliente!
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| LT3680HMSE | 5000 | 16+ | MSOP10 | LTCYM |
| LT3680IMSE | 5000 | 16+ | MSOP10 | LTCYM |
| LTC3805EMSE-5 | 5000 | 16+ | MSOP10 | LTDGX |
| LTC3805HMSE-5 | 5000 | 16+ | MSOP10 | LTDGX |
| LTC3805IMSE-5 | 5000 | 16+ | MSOP10 | LTDGX |
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| LT3973HMSE | 5000 | 16+ | MSOP10 | LTFYS |
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Común:
MOQ:
10pcs